2SK2611 900V 9A N-Channel Mosfet – TO-3PN-Package IBAT21870

This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switch-mode power supplies. K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode